Tetravalent tin(Sn4+)-based inorganic perovskite semiconductors like Cs2SnI6are expected to replace lead-based perovskite counterparts due to advantages such as structural stability and environmental friendli...Tetravalent tin(Sn4+)-based inorganic perovskite semiconductors like Cs2SnI6are expected to replace lead-based perovskite counterparts due to advantages such as structural stability and environmental friendliness.In this paper,we reported the dopant compensation effect in the component-dependent self-doped(111)-oriented Cs2SnI6thin films grown with pulsed laser deposition(PLD)at room temperature.The films were grown on(100)-SrTiO3(STO)substrates at room temperature by PLD.Hall results of the Cs2SnI6films with different components realizing by controlling the ratio of SnI4/CsI in the targets demonstrate a clear change of conductivity type from N-type to P-type,while the carrier concentration decreases from 1018 to 1013 and accordingly the film resistivity increases significantly from 3.8 to 2506Ωcm.The defect-relatedopticalfingerprints of Cs2SnI6films werealsoinvestigated withtemperature-dependent photoluminescence spectroscopy.At low temperatures of 10 K,the Cs2SnI6films exhibit donor-bound(D0X)and donor-acceptor pair(DAP)emission,respectively,due to the self-doping effect.These re-sults indicate that controlling the composition of the PLD target is a powerful way to tune the electrical properties of Cs2SnI6films for possible applications in solar cells or X-ray detectors.展开更多
2025年9月10日,浙江大学良渚实验室、东部战区总医院国家肾脏疾病临床医学研究中心刘志红教授、俞晓敏研究员、周青教授团队在《自然》(Nature)杂志发表了题为“Loss-of-function mutations in PLD4 lead to systemic lupus erythemato...2025年9月10日,浙江大学良渚实验室、东部战区总医院国家肾脏疾病临床医学研究中心刘志红教授、俞晓敏研究员、周青教授团队在《自然》(Nature)杂志发表了题为“Loss-of-function mutations in PLD4 lead to systemic lupus erythematosus”论文(DOI:10.1038/s41586-025-09513-x),证实人类PLD4缺陷可导致系统性红斑狼疮(SLE)并阐明了其致病机制,为SLE的精准诊疗提供了重要的理论依据。展开更多
MgO thin films with different textures are fabricated by the ion beam assisted (IBAD) method on the Y2O3/Al2O3 buffered C276 tape. Then a CaO2 layer is directly grown on the IBAD-MgO film by the pulsed laser deposit...MgO thin films with different textures are fabricated by the ion beam assisted (IBAD) method on the Y2O3/Al2O3 buffered C276 tape. Then a CaO2 layer is directly grown on the IBAD-MgO film by the pulsed laser deposition (PLD) method. Effects of lBAD-MgO texture, substrata temperature and thickness on the grain alignment of the CeO2 layer are investigated. Film characterization is performed by x-ray diffraction and atomic force microscopy. It is found that the orientation and texture degree of the CaO2 layer are very sensitive to the IBAD-MgO texture. By optimizing the IBAD-MgO texture, CeO2 has pure (002) orientation and excellent biaxial texture deposited in a broad substrata temperature range. In addition, the PLD-CeO2 layer has a thickness effect. Under the optimized experimental condition, the PLD-CeO2 layer has a high in-plane texture of △φ = 2.9° and a smooth surface with an rms surface roughness of less than 2nm. The critical current density Jc of a 0.4μm-thick YBCO film deposited on the CeO2 layer is 6.25 × 106 A/cm2 at 77K and a self-field.展开更多
基金financially supported by the National Key Re-search and Development Program of China(No.2022YFC3700801)the Key R&D Program of Shandong Province,China(No.2024SFGC0102),the Jinan Bureau of Education(No.JNSX2023015)the Jinan Bureau of Science and Technology(No.202333042).
摘要Tetravalent tin(Sn4+)-based inorganic perovskite semiconductors like Cs2SnI6are expected to replace lead-based perovskite counterparts due to advantages such as structural stability and environmental friendliness.In this paper,we reported the dopant compensation effect in the component-dependent self-doped(111)-oriented Cs2SnI6thin films grown with pulsed laser deposition(PLD)at room temperature.The films were grown on(100)-SrTiO3(STO)substrates at room temperature by PLD.Hall results of the Cs2SnI6films with different components realizing by controlling the ratio of SnI4/CsI in the targets demonstrate a clear change of conductivity type from N-type to P-type,while the carrier concentration decreases from 1018 to 1013 and accordingly the film resistivity increases significantly from 3.8 to 2506Ωcm.The defect-relatedopticalfingerprints of Cs2SnI6films werealsoinvestigated withtemperature-dependent photoluminescence spectroscopy.At low temperatures of 10 K,the Cs2SnI6films exhibit donor-bound(D0X)and donor-acceptor pair(DAP)emission,respectively,due to the self-doping effect.These re-sults indicate that controlling the composition of the PLD target is a powerful way to tune the electrical properties of Cs2SnI6films for possible applications in solar cells or X-ray detectors.
摘要2025年9月10日,浙江大学良渚实验室、东部战区总医院国家肾脏疾病临床医学研究中心刘志红教授、俞晓敏研究员、周青教授团队在《自然》(Nature)杂志发表了题为“Loss-of-function mutations in PLD4 lead to systemic lupus erythematosus”论文(DOI:10.1038/s41586-025-09513-x),证实人类PLD4缺陷可导致系统性红斑狼疮(SLE)并阐明了其致病机制,为SLE的精准诊疗提供了重要的理论依据。
基金Supported by the ITER Project of the Ministry of Science and Technology of China under Grant No 2011GB113004the Shanghai Commission of Science and Technology under Grant Nos 09DZ1206000 and 11DZ1100402the Youth Fund of Natural Science Foundation of China under Grant No 11204174
摘要MgO thin films with different textures are fabricated by the ion beam assisted (IBAD) method on the Y2O3/Al2O3 buffered C276 tape. Then a CaO2 layer is directly grown on the IBAD-MgO film by the pulsed laser deposition (PLD) method. Effects of lBAD-MgO texture, substrata temperature and thickness on the grain alignment of the CeO2 layer are investigated. Film characterization is performed by x-ray diffraction and atomic force microscopy. It is found that the orientation and texture degree of the CaO2 layer are very sensitive to the IBAD-MgO texture. By optimizing the IBAD-MgO texture, CeO2 has pure (002) orientation and excellent biaxial texture deposited in a broad substrata temperature range. In addition, the PLD-CeO2 layer has a thickness effect. Under the optimized experimental condition, the PLD-CeO2 layer has a high in-plane texture of △φ = 2.9° and a smooth surface with an rms surface roughness of less than 2nm. The critical current density Jc of a 0.4μm-thick YBCO film deposited on the CeO2 layer is 6.25 × 106 A/cm2 at 77K and a self-field.