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Solar-blind UV light-modulatedβ-Ga2O3full-wave bridge rectifier 认领 引用 被引量：2
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作者 Haifeng Chen Yuduo Zhang +9 位作者 Xiexin Sun Jingguo Zong Qin Lu Yifan Jia Zhenfu Feng Zhan Wang Lijun Li Xiangtai Liu Shaoqing Wang Yue Hao 《Journal of Semiconductors》 EI CAS CSCD 2026年第1期24-28,共5页
A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga2O3and demonstrated the solar-blind UV(SUV)light-modulated chara... A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga2O3and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga2O3ACDC converters. 展开更多
关键词 β-Ga2O3 Schottky-barrier diode full-wave bridge rectifier solar-blind UV
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Passive auxiliary injection circuits for pulse tripling in three parallel-connected rectifiers 认领 引用
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作者 Md.Abdul Malek A.S.M.Junayet Hossain 《Journal of Electronic Science and Technology》 EI CAS CSCD 2026年第2期38-55,共18页
This paper proposes two types of passive auxiliary injection circuits(PAICs)that enable pulse tripling in three parallel-connected rectifiers,addressing the limitation of pulse multiplication to a factor of 2.The prop... This paper proposes two types of passive auxiliary injection circuits(PAICs)that enable pulse tripling in three parallel-connected rectifiers,addressing the limitation of pulse multiplication to a factor of 2.The proposed design combined three rectifier units with two PAICs consisting of a delta/star transformer and nine auxiliary diodes.By further integrating the PAICs with conventional topologies such as 3-pulse star,6-pulse star,6-pulse bridge,18-pulse star,and 18-pulse bridge rectifiers,we constructed 9-pulse star,18-pulse star,18-pulse bridge,54-pulse star,and 54-pulse bridge configurations,respectively.The validation in MATLAB/Simulink demonstrated that these configurations achieved a threefold increase in both output-voltage pulses and input-current steps without the need for complex phase-shifting transformers.Moreover,the total harmonic distortion of the input current was significantly reduced,with values of 12.63%,3.66%,3.43%,2.24%,and 1.90% for the respective designed rectifiers.To the best of our knowledge,this is the first demonstration of a passive pulse-tripling circuit for three parallelconnected rectifiers,offering a simple solution for high-current industrial applications. 展开更多
关键词 Harmonic reduction Multipulse rectifier Passive auxiliary injection circuit Rectifier Total harmonic distortion
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Ultrathin amorphous-Ga2O3vertical SBD-based bridge rectifier and its hybrid buck system 认领 引用
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作者 Haifeng Chen Yuduo Zhang +5 位作者 Xiexin Sun Xuyang Liu Chunling Chen Xiangtai Liu Jia Zhang Yahan Zhu 《Journal of Semiconductors》 EI CAS CSCD 2026年第4期116-121,共6页
This paper demonstrated a monolithically integrated 200 nm-ultrathin amorphous-Ga2O3vertical SBD-based bridge rectifier and its hybrid buck conversion system with a Si-MOSFET.The fabricated vertical Ga2O3S... This paper demonstrated a monolithically integrated 200 nm-ultrathin amorphous-Ga2O3vertical SBD-based bridge rectifier and its hybrid buck conversion system with a Si-MOSFET.The fabricated vertical Ga2O3SBD exhibits excellent characteristics and a high breakdown electric field strength of 1.35 MV/cm.The bridge rectifier circuit maintains stable operation at high frequencies of 50 kHz.And the hybrid buck system composed of the Ga2O3bridge rectifier and Si-MOSFET achieves adjustable step-down voltage output under the conditions of a 20 kHz switching frequency of Si-MOSFET and 50 Hz Vin.This work validates the practical value of Ga2O3rectifiers in high-frequency conversion systems. 展开更多
关键词 amorphous-Ga2O3 Schottky barrier diode bridge rectifier buck system
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A Rectifier Bridge Circuit Based on Metal-semiconductor-metal Fin Tunneling Diode for High-frequency Application 认领 引用 被引量：1
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作者 DENG Hengyang QIN Cuijie +5 位作者 HAO Shenglan FENG Guangdi ZHU Qiuxiang TIAN Bobo CHU Junhao DUAN Chungang 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2026年第2期253-261,共9页
Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunne... Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunneling diodes(FTDs)with tunneling distances of 10 and 5 nm are fabricated,which demonstrate remarkable characteristics,including ultrahigh asymmetry(1.6×104for 10 nm device and 1.6×103 for 5 nm device),high responsivity(25.3 V-1 for 10 nm device and 28.3 V-1 for 5 nm device)at zero bias,surpassing the thermal voltage limit of conventional Schottky diodes,and low turn-on voltage(Von)of approximately 100 mV for both devices,making them ideal for power conversion applications.Using technology computer-aided design(TCAD)simulations,the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling(FNT)and trap-assisted tunneling(TAT)under different biasing conditions,as illustrated by the corresponding energy band profiles.Furthermore,by integrating the FTDs,a rectifier bridge circuit is designed and exhibits full-wave rectification behavior,validated through SPICE simulations for THz-band operations.This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications. 展开更多
关键词 fin tunneling diode TCAD simulation rectifier bridge SPICE simulation
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Numerical Study on the Influence of Rectifier Grid on the Performances of a Cement Kiln’s SCR(Selective Catalytic Reduction)Denitrification Reactor 认领 引用
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作者 Liang Ai Mingyue Li +6 位作者 Lumin Chen Yihua Gao Yi Sun Yue Wu Fuping Qian Jinli Lu Naijin Huang 《Fluid Dynamics & Materials Processing》 EI 2025年第5期1171-1190,共20页
In this study,Computational Fluid Dynamics(CFD)together with a component transport model are exploited to investigate the influence of dimensionless parameters,involving the height of the rectifier grid and the instal... In this study,Computational Fluid Dynamics(CFD)together with a component transport model are exploited to investigate the influence of dimensionless parameters,involving the height of the rectifier grid and the installation height of the first catalyst layer,on the flow field and the overall denitration efficiency of a cement kiln’s SCR(Selective catalytic reduction)denitrification reactor.It is shown that accurate numerical results can be obtained by fitting the particle size distribution function to the actual cement kiln fly ash and implementing a non-uniform particle inlet boundary condition.The relative error between denitration efficiency derived from experimental data,numerical simulation,and real-time system pressure drop ranges from 4%to 9%.Optimization of the SCR reactor is achieved when the rectifier grid thickness ratio k/H≥0.030,the rectifier grid height ratio h/H=0.04,and the spacing between the rectifier grid and the first catalyst layer l/H=0.10.Under these conditions,airflow distribution and particle dispersion upstream of the catalyst result in increased denitration efficiencies of 3.21%,3.43%,and 3.27%,respectively,compared to the least favorable operating conditions. 展开更多
关键词 Cement kiln flue gas SCR denitrification reactor rectifier grid denitrification efficiency structure optimization
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Optimal Control for Vienna Rectifier in Unbalanced Conditions 认领 引用
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作者 LIU Chengzi HUANG Xiaoqi +1 位作者 MA Yaopeng BEN Guicin 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI CSCD 2025年第3期385-394,共10页
The Vienna rectifier is a widely adopted solution for high-power rectification due to its efficiency and straightforward design.However,its performance can degrade under unbalanced three phase voltage conditions,leadi... The Vienna rectifier is a widely adopted solution for high-power rectification due to its efficiency and straightforward design.However,its performance can degrade under unbalanced three phase voltage conditions,leading to current zero-crossing distortion and compromised dynamic response.This paper investigates the causes of these distortions,identifying a phase shift between the input current and the grid voltage as a primary factor,and proposes an effective distortion phase identification strategy.Furthermore,the dynamic performance is enhanced through improved current reference calculations and a refined power feedforward strategy.This approach optimizes the system's response to load changes and maintains output voltage stability under unbalanced conditions.Simulation results validate the effectiveness of the proposed methods in reducing current distortion and improving overall performance. 展开更多
关键词 zero-crossing distortion three-phase voltage unbalanced rectifier power feedforward
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Generic functional modelling of multi-pulse auto-transformer rectifier units for more-electric aircraft applications 认领 引用 被引量：1
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作者 Tao YANG Serhiy BOZHKO +2 位作者 Patrick WHEELER Shaoping WANG Shuai WU 《Chinese Journal of Aeronautics》 SCIE EI CAS CSCD 2018年第5期883-891,共9页
The Auto-Transformer Rectifier Unit（ATRU） is one preferred solution for high-power AC/DC power conversion in aircraft. This is mainly due to its simple structure, high reliability and reduced k VA ratings. Indeed, t... The Auto-Transformer Rectifier Unit（ATRU） is one preferred solution for high-power AC/DC power conversion in aircraft. This is mainly due to its simple structure, high reliability and reduced k VA ratings. Indeed, the ATRU has become a preferred AC/DC solution to supply power to the electric environment control system on-board future aircraft. In this paper, a general modelling method for ATRUs is introduced. The developed model is based on the fact that the DC voltage and current are strongly related to the voltage and current vectors at the AC terminals of ATRUs. In this paper, we carry on our research in modelling symmetric 18-pulse ATRUs and develop a generic modelling technique. The developed generic model can study not only symmetric but also asymmetric ATRUs. An 18-pulse asymmetric ATRU is used to demonstrate the accuracy and efficiency of the developed model by comparing with corresponding detailed switching SABER models provided by our industrial partner. The functional models also allow accelerated and accurate simulations and thus enable whole-scale more-electric aircraft electrical power system studies in the future. 展开更多
关键词 Asymmetric transformer Functional modelling More-Electric Aircraft Multi-pulse rectifier Transformer rectifier unit
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Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications 认领 引用
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作者 Wenqiang Song Fei Hou +2 位作者 Feibo Du Zhiwei Liu Juin JLiou 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第9期559-563,共5页
A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/2... A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR). With the shunting effect of the surface gated diode path, the proposed EGDTSCR, with a width of 50 μm, exhibits a higher failure current (i.e., 3.82 A) as well as a higher holding voltage (i.e., 10.21 V) than the MLSCR. 展开更多
关键词 electrostatic discharge(ESD) enhanced gated-diode-triggered silicon-controlled rectifier(EGDTSCR) modified lateral silicon-controlled rectifier(MLSCR) failure current holding voltage
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Coordinate control strategy for stability operation of offshore wind farm integrated with Diode-rectifier HVDC 认领 引用 被引量：18
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作者 Lijun Xie Liangzhong Yao +2 位作者 Fan Cheng Yan Li Shuai Liang 《Global Energy Interconnection》 EI 2020年第3期205-216,共12页
Due to low investment cost and high reliability,a new scheme called DR-HVDC(Diode Rectifier based HVDC)transmission was recently proposed for grid integration of large offshore wind farms.However,in this scheme,the ap... Due to low investment cost and high reliability,a new scheme called DR-HVDC(Diode Rectifier based HVDC)transmission was recently proposed for grid integration of large offshore wind farms.However,in this scheme,the application of conventional control strategies for stability operation face several challenges due to the uncontrollability of the DR.In this paper,a coordinated control strategy of offshore wind farms using the DR-HVDC transmission technology to connect with the onshore grid,is investigated.A novel coordinated control strategy for DR-HVDC is proposed based on the analysis of the DC current control ability of the full-bridge-based modular multilevel converter(FB-MMC)at the onshore station and the input and output characteristics of the diode rectifier at the offshore.Considering the characteristics of operation stability and decoupling between reactive power and active power,a simplified design based on double-loop droop control for offshore AC voltage is proposed after power flow and voltage–current(I–V)characteristics of the offshore wind farm being analyzed.Furthermore,the impact of onshore AC fault to offshore wind farm is analyzed,and a fast fault detection and protection strategy without relying on communication is proposed.Case studies carried out by PSCAD/EMTDC verify the effectiveness of the proposed control strategy for the start up,power fluctuation,and onshore and offshore fault conditions. 展开更多
关键词 Diode rectifier HVDC PMSG FB-MMC Control strategy AC fault
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Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension 认领 引用 被引量：6
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作者 宋庆文 张玉明 +4 位作者 张义门 张倩 郭辉 李志云 王中旭 《Chinese Physics B》 SCIE EI CAS 2010年第4期345-350,共6页
This paper investigates the behaviours of 4H--SiC merged PiN Schottky （MPS） rectifiers with junction termination extension （JTE） by extensive numerical simulations. The simulated results show that the present mode... This paper investigates the behaviours of 4H--SiC merged PiN Schottky （MPS） rectifiers with junction termination extension （JTE） by extensive numerical simulations. The simulated results show that the present model matches the experimental data very well. The influences of the JTE design parameters such as the doping concentration and length of the JTE on the breakdown characteristics are discussed in detail. Then the temperature sensitivity of the forward behaviour is studied in terms of the different designs of 4H--SiC MPS with JTE, which provides a particularly useful guideline for the optimal design of MPS rectifiers with JTE. 展开更多
关键词 4H-SiC merged PiN Schottky rectifier junction termination extension breakdown thermal behaviour
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Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region 认领 引用 被引量：5
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作者 宋庆文 张玉明 +2 位作者 张义门 张倩 吕红亮 《Chinese Physics B》 SCIE EI CAS 2010年第8期548-553,共6页
This paper proposes a double epi-layers 4H-SiC junction barrier Schottky rectifier （JBSR） with embedded P layer （EPL） in the drift region. The structure is characterized by the P-type layer formed in the n-type dr... This paper proposes a double epi-layers 4H-SiC junction barrier Schottky rectifier （JBSR） with embedded P layer （EPL） in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage （BV） and low specific on-resistance （Ron,sp）. The influences of device parameters, such as the depth of the embedded P＋ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga＇s figure of merit （BFOM） is increased by 67.9% compared to a conventional 4H-SiC JBSR. 展开更多
关键词 junction barrier Schottky rectifier 4H-SiC breakdown voltage specific on-resistance
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Effects of allocryptopine on outward potassium current and slow delayed rectifier potassium current in rabbit myocardium 认领 引用 被引量：2
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作者 Yi-Cheng FU Yu ZHANG +5 位作者 Liu-Yang TIAN Nan LI Xi CHEN Zhong-Qi CAI Chao ZHU Yang LI 《Journal of Geriatric Cardiology》 SCIE CAS CSCD 2016年第4期316-325,共10页
Objective Allocryptopine （ALL） is an effective alkaloid of Corydalis decumbens （Thunb.） Pers. Papaveraceae and has proved to be an- ti-arrhythmic. The purpose of our study is to investigate the effects of ALL on t... Objective Allocryptopine （ALL） is an effective alkaloid of Corydalis decumbens （Thunb.） Pers. Papaveraceae and has proved to be an- ti-arrhythmic. The purpose of our study is to investigate the effects of ALL on transmural repolarizing ionic ingredients of outward potassium current （Ito） and slow delayed rectifier potassium current （IKs）. Methods The monophasic action potential （MAP） technique was used to record the MAP duration of the epicardium （Epi）, myocardium （M） and endocardium （Endo） of the rabbit heart and the whole cell patch clamp was used to recordo and IKs in cardiomyocytes of Epi, M and Endo layers that were isolated from rabbit ventricles. Results The effects of ALL on MAP of Epi, M and Endo layers were disequilibrium. ALL could effectively reduce the transmural dispersion of repolarization （TDR） in rabbit transmural ventricular wall. ALL decreased the current densities ofo and IKs in a voltage and concentration dependent way and narrowed the repolarizing differences among three layers. The analysis of gating kinetics showed ALL accelerated the channel activation ofIto in M layers and partly inhibit the channel openings ofo in Epi, M and Endo cells. On the other hand, ALL mainly slowed channel deactivation of IKs channel in Epi and Endo layers without affecting its activation. Conclusions Our study gives partially explanation about the mechanisms of tmnsmural inhibition ofo and IKs channels by ALL in rabbit myocardium. These findings provide novel perspective regarding the anti-arrhythmogenesis application of ALL in clinical settings. 展开更多
关键词 Allocryptopine Endocardium Epicardium Midcardium Slow delayed rectifier potassium channel Transient outward potassiumcurrent
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Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers 认领 引用 被引量：1
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作者 邓小川 陈茜茜 +2 位作者 李诚瞻 申华军 张金平 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第8期317-321,共5页
The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and ... The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and mesa bottom corner,are investigated by numerical simulation.The simulation results show that a deep mesa height,a small mesa angle and a smooth mesa bottom（without sub-trench） could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution.Moreover,an optimized mesa structure without sub-trench（mesa height of 2.2 μm and mesa angle of 20°） is experimentally demonstrated.A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm^2 are obtained from the fabricated diode with a 30-μm thick N^- epi-layer,corresponding to 85% of the ideal parallel-plane value.The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge. 展开更多
关键词 silicon carbide mesa configuration PiN rectifier breakdown voltage
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Study on Various Rectifiers for Fan-Filter Units 认领 引用 被引量：5
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作者 刘俊杰 涂光备 马九贤 《Transactions of Tianjin University》 CAS 2002年第2期119-124,共6页
The face velocities of the high efficiency particulate air filters and the ultra low penetration airfilters in fan filter units (FFUs) have large relative standard deviation and turbulivity. It seriously affects the u... The face velocities of the high efficiency particulate air filters and the ultra low penetration airfilters in fan filter units (FFUs) have large relative standard deviation and turbulivity. It seriously affects the unidirectivity of the flow in the unidirectional flow clean zone and cleanroom. The cross contamination in this kind of unidirectional flow area is hardly controlled. It is significant to find optional method for keeping the face velocity uniformity of FFU and reducing the face velocity turbulivity of FFU, furthermore, to keep the cleanliness level under FFUs. The normal and easy method is to add flow rectifiers under filters. FFUs with various flow rectifiers have been tested. The uniformity and turbulivity of facevelocity under the FFU are presented in this paper. The influence of the facevelocity uniformity and turbulivity on the contamination boundary of the unidirectional flow is studiedas well. 展开更多
关键词 unidirectional flow air velocity uniformity turbulivity flow rectifier fan filter unit (FFU)
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A Nonlinear Control Strategy for Vienna Rectifier Under Unbalanced Input Voltage 认领 引用 被引量：1
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作者 REN Xiaoyong CHEN Yu +2 位作者 TONG Dan ZHANG Zhiliang CHEN Qianhong 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI CSCD 2019年第5期703-714,共12页
The Vienna rectifier with unbalanced input voltage and load transient is analyzed.A nonlinear control strategy for Vienna rectifier under unbalanced input is proposed.From the view of positive and negative sequence co... The Vienna rectifier with unbalanced input voltage and load transient is analyzed.A nonlinear control strategy for Vienna rectifier under unbalanced input is proposed.From the view of positive and negative sequence components,the proposed nonlinear control strategy suppresses the twice frequency ripple and guarantees the dynamic response characteristic at the same time.Thanks to the proposed nonlinear control strategy,the DC bus capacitor can be reduced a lot since the voltage ripple and drop can be suppressed.A 10 kW Vienna rectifier is built to verify the proposed control strategy.After applying the proposed nonlinear control strategy,the voltage ripple is only7 V and decreases over 75%over the traditional PI control when the unbalanced degree is 20%.The voltage drop can be reduced about 80%than former control strategy which is helpful to reduce the DC bus capacitor and achieve higher power density.The volume of the capacitor can be reduced by 83.3%with the new control method. 展开更多
关键词 Vienna rectifier radars unbalanced input voltage nonlinear control strategy DC bus capacitance
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High-Efficiency Rectifier for Wireless Energy Harvesting Based on Double Branch Structure 认领 引用 被引量：1
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作者 崔恒荣 焦劲华 +1 位作者 杨威 荆玉香 《Journal of Donghua University(English Edition)》 CAS 2023年第4期438-445,共8页
A rectifier circuit for wireless energy harvesting(WEH) with a wide input power range is proposed in this paper. We build up accurate models of the diodes to improve the accuracy of the design of the rectifier. Due to... A rectifier circuit for wireless energy harvesting(WEH) with a wide input power range is proposed in this paper. We build up accurate models of the diodes to improve the accuracy of the design of the rectifier. Due to the nonlinear characteristics of the diodes, a new band-stop structure is introduced to reduce the imaginary part impedance and suppress harmonics. A novel structure with double branches and an optimized λ/4 microstrip line is proposed to realize the power division ratio adjustment by the input power automatically. The proposed two branches can satisfy the two cases with input power of-20 dBm to 0 dBm and 0 dBm to 15 dBm, respectively. Here, dBm = 10 log(P mW), and P represents power. An impedance compression network(ICN) is correspondingly designed to maintain the input impedance stability over the wide input power range. A rectifier that works at 2.45 GHz is implemented. The measured results show that the highest efficiency can reach 51.5% at the output power of 0 dBm and higher than 40% at the input power of-5 dBm to 12 dBm. 展开更多
关键词 diode modeling rectifier circuit impedance compression network power division strategy
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Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress 认领 引用 被引量：1
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作者 张立忠 王源 何燕冬 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第12期507-513,共7页
The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the devic... The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR. 展开更多
关键词 electrostatic discharge （ESD） diode-triggered silicon controlled rectifier （DTSCR） transmission-line-pulsing （TLP） mathematical modeling
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The Effects of Protein Kinase C (PKC) on the Tension of Normal and Passively Sensitized Human Airway Smooth Muscle and the Activity of Voltage-dependent Delayed Rectifier Potassium Channel (Kv) 认领 引用 被引量：1
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作者 程东军 徐永健 +3 位作者 刘先胜 赵丽敏 熊盛道 张珍祥 《Journal of Huazhong University of Science and Technology(Medical Sciences)》 2007年第2期153-156,共4页
The effects of protein kinase C （PKC） on the tension and the activity of voltage-dependent delayed rectifier potassium channel （K,,） were examined in normal and passively sensitized human airway smooth muscle （H... The effects of protein kinase C （PKC） on the tension and the activity of voltage-dependent delayed rectifier potassium channel （K,,） were examined in normal and passively sensitized human airway smooth muscle （HASM）, by measuring tones and whole-cell patch clamp techniques, and the Kv activities and membrane potential （Em） were also detected. The results showed that phorbol 12-myristate 13-acetate （PMA）, a PKC activator, caused a concentration-dependent constriction in normal HASM rings. The constriction of the passively sensitized muscle in asthma serum group was significantly higher than that of the normal group （P〈0.05）, and the constrictions of both groups were completely abolished by PKC inhibitor Ro31-8220 and calcium channel inhibitor nifedipine. Kv activities of HASM cells were significantly inhibited by PMA, and the Em became more positive, as compared with the DMSO （a PMA menstruum）-treated group （P〈0.01）. This effect could be blocked by Ro31-8220 （P〈0.01 ）. It was concluded that activation of PKC could increase the tones of HASM, which might be related to the reduced Kv activity. In passively sensitized HASM rings, this effect was more notable. 展开更多
关键词 protein kinase C delayed rectifier potassium channel human airway smooth muscle asthma
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Simulation of a kind of active harmonic reduction 18-pulse rectifier 认领 引用 被引量：1
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作者 CHEN Xiao-qiang ZHAO Shou-wang WANG Ying 《Journal of Measurement Science and Instrumentation》 CAS CSCD 2018年第2期160-168,共9页
To solve the input current harmonic pollution of the high power rectifier system,18-pulse rectifier based on a kind of active harmonic suppression technique at dc side is proposed in this paper.The pulse rectifier emp... To solve the input current harmonic pollution of the high power rectifier system,18-pulse rectifier based on a kind of active harmonic suppression technique at dc side is proposed in this paper.The pulse rectifier employs three-phase diode bridges,each of them followed by a boost converter.Unlike the conventional three-phase unity-power-factor diode rectifier,the ideal sinusoidal main currents of circuit topology are obtained by control its output current or input currents of three boost converters for approximately triangular modulation.The theoretical of modulation strategy and characteristics of input and output currents about the proposed rectifier are analyzed in detail.Simulation results by Matlab/Simulink demonstrate that the proposed rectifier draws nearly sinusoidal current and power quality index is improved.The correctness of the theoretical analysis is validated. 展开更多
关键词 18-pulse rectifier active harmonic suppression three-phase unity-power-factor sinusoidal current topology
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Junction barrier Schottky rectifier with an improved P-well region 认领 引用
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作者 王颖 李婷 +2 位作者 曹菲 邵雷 陈宇贤 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第12期544-549,共6页
A junction barrier Schottky （JBS） rectifier with an improved P-well on 4H-SiC is proposed to improve the VF-IR trade-off and the breakdown voltage. The reverse current density of the proposed JBS rectifier at 300 K ... A junction barrier Schottky （JBS） rectifier with an improved P-well on 4H-SiC is proposed to improve the VF-IR trade-off and the breakdown voltage. The reverse current density of the proposed JBS rectifier at 300 K and 800 V is about 3.3 × 10-s times that of the common JBS rectifier at no expense of the forward voltage drop. This is because the depletion layer thickness in the P-well region at the same reverse voltage is larger than in the P＋ grid, resulting in a lower spreading current and tunneling current. As a result, the breakdown voltage of the proposed JBS rectifier is over 1.6 kV, that is about 0.8 times more than that of the common JBS rectifier due to the uniform electric field. Although the series resistance of the proposed JBS rectifier is a little larger than that of the common JBS rectifier, the figure of merit （FOM） of the proposed JBS rectifier is about 2.9 times that of the common JBS rectifier. Based on simulating the values of susceptibility of the two JBS rectifiers to electrostatic discharge （ESD） in the human body model （HBM） circuits, the failure energy of the proposed JBS rectifier increases 17% compared with that of the common JBS rectifier. 展开更多
关键词 Schottky rectifier breakdown voltage forward voltage drop reverse current density
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