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Structural and Phase Engineering in Two-Dimensional Polymorphic In2Se3 认领 引用
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作者 Ming Yang Guang Wang +4 位作者 Bo Li Yayun Yu Bowen Yao Zhihui Qin Jiayu Dai 《Chinese Physics Letters》 SCIE EI CAS CSCD 2025年第12期239-252,共14页
The two-dimensional van der Waals layered semiconductor In2Se3 has emerged as a promising candidate for non-volatile ferroelectric memory,optoelectronic devices,and polymorphic phase engineering.Polymorphic In_(... The two-dimensional van der Waals layered semiconductor In2Se3 has emerged as a promising candidate for non-volatile ferroelectric memory,optoelectronic devices,and polymorphic phase engineering.Polymorphic In2Se3 typically stabilizes in three distinct phases:α-,β′-,and β*-In2Se3,each dominant within specific temperature ranges.Although the crystal structures and ferroelectric properties of these phases have been widely studied,the unambiguous assignment of their in-plane and out-of-plane ferroelectric behaviors,as well as the mechanisms governing their phase transitions,remains a subject of active debate.In this study,we investigate the evolution of atomic and electronic structures in molecular beam epitaxy-grown ultrathin In2Se3 films through correlated microstructural and macroscopic physical property analysis.By employing scanning tunneling microscopy/spectroscopy,temperature-dependent Raman spectroscopy,and piezoresponse force microscopy,we demonstrate a reversible temperature-induced phase transition between the in-plane ferroelectric β*and antiferroelectric β′phases.Furthermore,we confirm robust out-of-plane ferroelectric polarization in the as-grown films and achieve an electric-field-driven transition from the β*to β′phase.Our findings not only advance the fundamental understanding of phase transitions and polarization evolution in two-dimensional semiconductors but also open new avenues for the design of tunable,non-volatile ferroelectric memory devices. 展开更多
关键词 polymorphic phase engineeringpolymorphic structural engineering optoelectronic devices two dimensional polymorphic ferroelectric properties Se crystal structures phase engineering
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